TGAN 40N120F2D IGBT Transistor (1200V, 40A, TO-247)

The 40N120F2D IGBT transistor is a high-performance power semiconductor designed for demanding switching applications. With a voltage rating of 1200V and current capacity of 40A, it is ideal for high-power circuits such as solar inverters, motor drives, UPS systems, and industrial equipment.

Built in a TO-247 package, this component ensures excellent thermal performance and easy mounting with heatsinks. It delivers fast switching speeds, low conduction losses, and reliable operation under heavy loads.

This IGBT combines MOSFET gate control with bipolar conduction efficiency, making it a preferred choice for modern power electronics systems.

Key Features
Voltage Rating: 1200V
Current Rating: 40A
Low switching and conduction losses
High efficiency and reliability
TO-247 package for better heat dissipation
Suitable for high-frequency applications
Applications
Solar inverters
Industrial motor drives
UPS systems
Power supplies (SMPS)
Welding machines
High-power converters